Title :
Threshold modelling of MOSFETs for CAD of CMOS-VLSI
Author_Institution :
University of Birmingham, Electronic & Electrical Engineering Department, Birmingham, UK
Abstract :
A simple model is proposed to describe threshold and weak-inversion operation of the enhancement-mode MOSFET. The model has been tested against two-dimensional numerical simulations and gives accurate descriptions of transistor characteristics. The model possesses continuity of current and derivatives and is suitable for the CAD of low-voltage low-power CMOS integrated circuits.
Keywords :
CMOS integrated circuits; VLSI; insulated gate field effect transistors; semiconductor device models; CAD; CMOS-VLSI; continuity of current; enhancement-mode MOSFET; low-power CMOS integrated circuits; threshold modelling; two-dimensional numerical simulations; weak-inversion operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850158
