Title :
1.43 μm InAs bilayer quantum dot lasers on GaAs substrate
Author :
Li, L.H. ; Rossetti, M. ; Fiore, A. ; Patriarche, G.
Author_Institution :
Ecole Polytechnique Fed. de Lausanne, Inst. of Photonics & Quantum Electron., Lausanne, Switzerland
fDate :
5/25/2006 12:00:00 AM
Abstract :
An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by molecular beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold current density is 134 A/cm2. Output power of 23 mW per facet is achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical waveguides; quantum dot lasers; semiconductor epitaxial layers; substrates; 1.43 micron; 23 mW; AlGaAs-GaAs; InAs; bilayer quantum dot lasers; edge emitting laser; molecular beam epitaxy; threshold current density; waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/iel:20060918
