SiGe HMODFET "KAIST" micropower model and amplifier realization

Author

Vilches, Antonio ; Fobelets, Kristel ; Michelakis, Kostis ; Despotopoulos, Solon ; Papavassiliou, Christos ; Hackbarth, Thomas ; König, Ulf

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK

Volume

51

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1100

Lastpage

1105

Abstract

The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-μW total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included.

Keywords

Ge-Si alloys; HEMT circuits; radiofrequency amplifiers; semiconductor device models; silicon; 300 muW; HMODFET; KAIST micropower model; RF characteristics; SiGe-Si; power consumption; small signal model; Data mining; Energy consumption; Germanium silicon alloys; Power amplifiers; Power measurement; Predictive models; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Time measurement; MODFET; Micropower; SiGe; modeling;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2004.829242

Filename

1304966