DocumentCode
1006836
Title
High-efficiency Ka- and Ku-band MESFET oscillators
Author
Evans, D.H.
Author_Institution
Philips Research Laboratories, Redhill, UK
Volume
21
Issue
6
fYear
1985
Firstpage
254
Lastpage
255
Abstract
A relationship between GaAs MESFET oscillator efficiency and power and basic device characteristics is given. This has been confirmed by measurements on 16.8 and 28.5 GHz experimental designs, which have demonstrated efficiencies of 28 and 17.6%, respectively.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; solid-state microwave circuits; 16.8 GHz; 28.5 GHz; GaAs; III-V semiconductors; Ka-band; Ku-band MESFET oscillators; SHF; device characteristics; efficiency; power; solid-state microwave circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850181
Filename
4251002
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