Title :
Improved very-high-speed packaged InGaAs PIN punch-through photodiode
Author :
Burrus, C.A. ; Bowers, John E. ; Tucker, Rodney
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratories, Holmdel, USA
Abstract :
We describe the fabrication and characterisation of an improved, coaxially packaged, back-illuminated mesa PIN photodetector utilising an InGaAs absorbing layer on an InP substrate. The measured 3 dB bandwidth is 22 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; InGaAs PIN punch-through photodiode; InGaAs absorbing layer; InP substrate; bandwidth 22 GHz; characterisation; coaxial packaging; fabrication; mesa PIN photodetection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850186
