Title :
Effect of magnetic field on n+nn+ GaAs ballistic diode
Author_Institution :
Banaras Hindu University, Applied Physics Section, Institute of Technology, Varanasi, India
Abstract :
The AC impedance of a ballistic diode under a transverse magnetic field shows distinct behaviour depending on the cyclotron frequency. An equivalent lumped parameter RLC representation is obtained.
Keywords :
III-V semiconductors; electric impedance; gallium arsenide; semiconductor device models; semiconductor diodes; AC impedance; cyclotron frequency; equivalent lumped parameter RLC representation; magnetic field; n+ nn+ GaAs ballistic diode; velocity overshoot phenomena;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850205
