Title :
High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers
Author :
Bowers, John E. ; Koch, T.L. ; Hemenway, B.R. ; Wilt, D.P. ; Bridges, T.J. ; Burkhardt, E.G.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 3 dB bandwidth; HF modulation; InGaAsP lasers; nonlinear limitations; parasitic capacitance; semiconductor laser; vapour-phase-transported laser structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850213
