DocumentCode
1007183
Title
Surface electrical breakdown and leakage current on semi-insulating InP
Author
Kitagawa, Tomotaka ; Hasegawa, Hiroshi ; Ohno, Hideo
Author_Institution
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Volume
21
Issue
7
fYear
1985
Firstpage
299
Lastpage
301
Abstract
Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4 The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.
Keywords
III-V semiconductors; electric breakdown of solids; indium compounds; leakage currents; passivation; III-V semiconductor; InP; Si3N4; SiO2; anodic oxide; breakdown voltage; leakage current; passivation; semiinsulating substrate; surface electrical breakdown;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850214
Filename
4251036
Link To Document