Title :
Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines
Author :
Yang, L.Y. ; Zhang, D.H. ; Li, C.Y. ; Wu, S.Y. ; Foo, P.D.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
6/10/2004 12:00:00 AM
Abstract :
An additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition. It was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200°C for 40 h.
Keywords :
chemical vapour deposition; copper; dielectric losses; dielectric materials; dielectric thin films; electric breakdown; electric resistance; interconnections; metallisation; porous materials; silicon compounds; thermal stability; 200 degC; 40 h; Cu; Si; SiCN; SiCN dielectric barrier layer; chemical vapour deposition; dielectric breakdown; dielectric losses; dielectric materials; electric resistance; metal barrier deposition; porous materials; thermal stability; ultra-low k dielectrics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040519
