Title :
1.3 μm InGaAsP index-guided multirib waveguide laser array
Author :
Dutta, N.K. ; Cella, T. ; Napholtz, S.G. ; Craft, D.C.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
Phase-locked InGaAsP index-guided multirib waveguide laser arrays emitting at 1.3 μm have been fabricated. These devices have threshold currents in the range 400-500 mA at 30°C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60°C. The lasers emit in multilongitudinal modes with a far-field divergence of 20° × 40°.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 microns wavelength; III-V semiconductors; InGaAsP; ambient temperature; far-field divergence; index-guided multirib waveguide; laser arrays; multilongitudinal modes; pulsed output powers; semiconductor junction lasers; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850230
