High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror

Author

Symonds, C. ; Dion, J. ; Sagnes, I. ; Dainese, M. ; Strassner, M. ; Leroy, L. ; Oudar, J.L.

Author_Institution

Lab. pour la Photonique et les Nanostructures, LPN-CNRS, Marcoussis, France

Volume

40

Issue

12

fYear

2004

fDate

6/10/2004 12:00:00 AM

Firstpage

734

Lastpage

735

Abstract

1.55 μm room-temperature continuous-wave operation of a high performance optically pumped vertical external cavity surface emitting laser is reported. The structure includes an active region with strain compensated quantum wells, and a broadband SiN_x/Si/Au Bragg reflector transferred on an Si substrate by Au/In dry bonding. Output power of up to 45 mW is achieved at 0°C, and continuous-wave operation is observed up to 45°C.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; gold; indium compounds; laser mirrors; optical pumping; quantum well lasers; silicon; silicon compounds; surface emitting lasers; 0 to 45 degC; 1.55 micron; 45 mW; Au/In dry bonding; GaInAsP; Si; SiN-Si-Au; SiN_x/Si/Au Bragg reflector; broadband integrated dielectric metal mirror; optical pumping; room-temperature continuous wave operation; strain compensated quantum wells; vertical external cavity surface emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20040535

Filename

1305471