Title :
Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
Author :
Jyh-Shyang Wang ; Ru-Shang Hsiao ; Jenn-Fang Chen ; Chu-Shou Yang ; Lin, G. ; Chiu-Yueh Liang ; Chih-Ming Lai ; Hui-Yu Liu ; Tung-Wei Chi ; Chi, J.-Y.
Author_Institution :
Dept. of Phys., Chung Yuan Christian Univ., Chung-Li City, Taiwan
Abstract :
Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L=1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm2 per QD layer were achieved.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; infrared spectra; quantum dot lasers; 1 mm; 1.3 mum; InAs-GaAs; InAs-GaAs quantum dots; continuous laser gain spectra; differential quantum efficiency; electroluminescence spectrum; electronic vertically coupled quantum dots; large-broad laser gain spectra; laser gain spectrum; threshold current density; zero total optical loss; Laser modes; Laser tuning; Optical coupling; Quantum dot lasers; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers; Electronic vertically coupled quantum dots (EVCQDs); InAs quantum dots (QDs); lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851949
