DocumentCode :
1007669
Title :
Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon
Author :
Alzanki, T. ; Gwilliam, R. ; Emerson, N. ; Sealy, B.J.
Author_Institution :
Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK
Volume :
40
Issue :
12
fYear :
2004
fDate :
6/10/2004 12:00:00 AM
Firstpage :
774
Lastpage :
775
Abstract :
Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm-2 in <100> silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.
Keywords :
Hall mobility; antimony; doping profiles; electron density; electron mobility; elemental semiconductors; p-n junctions; secondary ion mass spectra; silicon; Hall effect measurements; Sb implanted silicon; Si:Sb; atomic profiles; carrier profiles; electron concentration; mobility profiles; nanometer size resolution; secondary ion mass spectroscopy; ultra shallow junctions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040493
Filename :
1305497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1007669
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