Title :
High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates
Author :
Shiojima, K. ; Makimura, T. ; Kosugi, T. ; Sugitani, S. ; Shigekawa, N. ; Ishikawa, H. ; Egawa, T.
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
fDate :
6/10/2004 12:00:00 AM
Abstract :
The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.
Keywords :
III-V semiconductors; MMIC mixers; UHF integrated circuits; UHF mixers; aluminium compounds; field effect MMIC; gallium compounds; high electron mobility transistors; power integrated circuits; silicon compounds; wide band gap semiconductors; 11 dB; 2 GHz; 5 GHz; 5 dB; AlGaN-GaN; HEMT; SiC; dual gate transistors; gate device; high power AlGaN-GaN dual gate high electron mobility transistor mixers; output power; power mixers; upconversion gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040512
