DocumentCode
1007695
Title
InGaP/InGaAs PHEMT with high IP3 for low noise applications
Author
Lin, Y.C. ; Chang, E.Y. ; Chen, G.J. ; Lee, H.M. ; Huang, G.W. ; Biswas, D. ; Chang, C.Y.
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
40
Issue
12
fYear
2004
fDate
6/10/2004 12:00:00 AM
Firstpage
777
Lastpage
778
Abstract
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; AlGaAs; InGaP-InGaAs; InGaP/InGaAs PHEMT; Schottky layer; device linearity; dual delta doped layers; low noise applications; pseudomorphic high electron mobility transistor; semiconductor device models; spacer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040458
Filename
1305499
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