Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

Author

Kim, Seong-Jin

Author_Institution

Photonic Devices Res. Lab., Itswell Co., Chungbuk, South Korea

Volume

17

Issue

8

fYear

2005

Firstpage

1617

Lastpage

1619

Abstract

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is ∼7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (∼4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.

Keywords

III-V semiconductors; electrodes; etching; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; 7 mW; Al₂O₃; GaN; GaN-based LED; ITO; InSnO; chemical wet-etching; external quantum efficiency; indium-tin-oxide electrode; integral light-output power; light-emitting diode; nitride semiconductor LED; sapphire substrate; sapphire-etched LED; transparent electrode; vertical electrode; Chemicals; Electrodes; Light emitting diodes; Liquid crystal displays; Radio frequency; Scanning electron microscopy; Semiconductor lasers; Substrates; Thermal conductivity; Wet etching; GaN; III–V light-emitting diode (LED); indium-tin-oxide (ITO); metal–organic chemical vapor deposition;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.851982

Filename

1471753