DocumentCode
1007727
Title
Improved high-power twin-channel laser with blocking layer
Author
Morrison, C.B. ; Zinkiewicz, L.M. ; Burghard, A. ; Figueroa, L.
Author_Institution
TRW Incorporated, Electro Optics Research Center, Redondo Beach, USA
Volume
21
Issue
8
fYear
1985
Firstpage
337
Lastpage
338
Abstract
We present an improved version of the twin-channel laser as a prototype for a new concept in semiconductor laser array structures with a well controlled far-field beam pattern. The laser device constitutes the first CW semiconductor laser array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilisation and efficiency over previous structures.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; GaAlAs/GaAs; GaAs substrate; III-V semiconductors; current-blocking layers; far-field beam pattern; high-power CW operation; integrated optics; p-type; semiconductor laser array structures; twin-channel laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850238
Filename
4251093
Link To Document