Title :
Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structures
Author :
Wakita, Ken ; Kawamura, Yuriko ; Yoshikuni, Y. ; Asahi, H.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
Large optical absorption changes are observed in InGaAs/InGaAlAs multiple quantum wells when an electric field is applied perpendicular to the wells for incident light both parallel and perpendicular to the MQW layers. Polarisation-related absorption spectra are also investigated.
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; indium compounds; light polarisation; optical modulation; semiconductor superlattices; III-V semiconductors; InGaAs/InGaAlAs; MQW layers; electroabsorption; multiple quantum-well structures; optical modulator; polarisation-related absorption spectra; room-temperature excitons; semiconductor superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850239
