DocumentCode
1007992
Title
Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
Author
Kawamura, Yuriko ; Wakita, Ken ; Asahi, H.
Author_Institution
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume
21
Issue
9
fYear
1985
Firstpage
371
Lastpage
373
Abstract
Heavy-hole and light-hole excitons were clearly observed at room temperature in the InGaAs/InAlAs MQW structure for the first time. The observed values of the exciton peak energy agree well with the calculated values. The halfwidth of the photoluminescence spectrum of MQW wafers is as narrow as 470 Ã… (25 meV) at room temperature, which is only 57% of that (970 Ã…, 44 meV) of the undoped bulk InGaAs layer.
Keywords
III-V semiconductors; excitons; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor superlattices; III-V semiconductors; InGaAs/InAlAs MQW structures; exciton peak energy; heavy-hole excitons; light-hole excitons; multiquantum well structures; photoluminescence spectrum; room temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850265
Filename
4251121
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