Title :
Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
Author :
Kawamura, Yuriko ; Wakita, Ken ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Heavy-hole and light-hole excitons were clearly observed at room temperature in the InGaAs/InAlAs MQW structure for the first time. The observed values of the exciton peak energy agree well with the calculated values. The halfwidth of the photoluminescence spectrum of MQW wafers is as narrow as 470 Ã… (25 meV) at room temperature, which is only 57% of that (970 Ã…, 44 meV) of the undoped bulk InGaAs layer.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor superlattices; III-V semiconductors; InGaAs/InAlAs MQW structures; exciton peak energy; heavy-hole excitons; light-hole excitons; multiquantum well structures; photoluminescence spectrum; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850265
