Title :
Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures
Author :
Itoh, T. ; Griem, T. ; Wicks, G.W. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures has been calculated as a function of the spacer layer thickness, the doping concentration in Al0.48In0.52As and the lattice temperature. The calculated results were compared with those for Al0.3Ga0.7As/GaAs structures and also with the experimental data. It is shown that, compared with AlGaAs/GaAs about 1.5 times higher sheet electron concentration can be obtained in AlInAs/GaInAs at the same doping level, which is in good agreement with the experimental results.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor superlattices; Al0.48In0.52As/Ga0.47In0.53 As modulation-doped structures; III-V semiconductors; doping concentration; lattice temperature; semiconductor superlattices; sheet electron concentration; spacer layer thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850266
