Ultrafast all-optical NOR gate based on intersubband and interband transitions

Author

Naruse, Makoto ; Yoshida, Haruhiko ; Miyazaki, Tetsuya ; Kubota, Fumito ; Ishikawa, Hiroshi

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan

Volume

17

Issue

8

fYear

2005

Firstpage

1701

Lastpage

1703

Abstract

An architecture for ultrafast all-optical digital processing, particularly NOR gates, based on intersubband and interband transitions in semiconductor quantum wells is proposed. Proof-of-principle experimental results and their analysis are also shown using InGaAs-AlAsSb coupled double-quantum-well structures that allow operation at communication wavelengths.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; logic gates; optical information processing; optical logic; semiconductor quantum wells; InGaAs-AlAsSb; InGaAs-AlAsSb coupled double-quantum-well structures; all-optical digital processing; interband transition; intersubband transition; semiconductor quantum wells; ultrafast all-optical NOR gate; Absorption; Electrons; Optical fiber networks; Optical fibers; Optical modulation; Optical saturation; Optical signal processing; Optical switches; Resonance; Ultrafast optics; Intersubband transition (ISB-T); optical signal processing; ultrafast optical switch;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.851879

Filename

1471781