• DocumentCode
    1008021
  • Title

    2-20 GHz hybrid GaAs MESFET distributed amplifier

  • Author

    Venet, C. ; Baudet, P.

  • Author_Institution
    Laboratoire d´´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    21
  • Issue
    9
  • fYear
    1985
  • Firstpage
    376
  • Lastpage
    377
  • Abstract
    A hybrid distributed amplifier using eight 75 μm-gate periphery GaAs MESFETs is reported. The amplifier operates in the 2-20 GHz frequency range with 6.2 dB gain ±0.4 dB gain ripple.
  • Keywords
    hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; 2 GHz to 20 GHz; GaAs; K-band; MESFET; MESFETs; S-band; X-band; distributed amplifier; gain ripple; hybrid;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850268
  • Filename
    4251124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1008021