Title :
Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures
Author :
Asano, Takashi ; Kuriyama, Yasuhiko ; Ishiwara, Hiroshi
Author_Institution :
Tokyo Institute of Technology, Graduate School of Science & Engineering, Yokohama, Japan
Abstract :
Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.
Keywords :
carrier mobility; insulated gate field effect transistors; oxidation; MOSFETs; Si/CaF2/Si heteroepitaxial structures; maximum field-effect electron mobility; silicon-on-insulator structures; thermal oxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850275
