DocumentCode :
1008198
Title :
Annealing of heavy ion irradiated Nb3 Ge films
Author :
Krämer, H.P. ; Schauer, W. ; Wühl, H. ; Nolscher, C. ; Adrian, H. ; Saemann-Ischenko, G.
Author_Institution :
Institut für Technische Physik, and Universität Karlsruhe, Karlsruhe, F.R. Germany
Volume :
21
Issue :
2
fYear :
1985
fDate :
3/1/1985 12:00:00 AM
Firstpage :
823
Lastpage :
826
Abstract :
High Tc Nb3 Ge films prepared by coevaporation have been irradiated by 20 MeV sulfur ions at low temperatures (< 25 K). X-ray analysis showed an expansion of the Al5 lattice and an increasing degree of amorphicity, while Tc vs. dose decreased from 22 K to 4.3 K with a slight minimum of ∼70 mK depth at 
cm-2before saturation. - Filmsirradiated by doses up to 
cm-2could be annealed to the pre-irradiation Tc . In contrast, strong irradiation led to an (X-ray-) amorphous structure, from which Tc values of only 15-17 K could be recovered, similar to the results obtained for amorphous NbGe films condensed at LN2 temperature. - The behaviour of the film resistivity during the heat treatment indicates that for films irradiated by low doses only lattice defects anneal, whereas for high dose damaged films recrystallization from the amorphous state occurs.
cm-2before saturation. - Filmsirradiated by doses up to cm-2could be annealed to the pre-irradiation TKeywords :
Heavy ions; Ion radiation effects; Superconducting materials; Amorphous materials; Annealing; Conductors; Electron guns; Filters; Germanium; Lattices; Niobium compounds; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1985.1063648
Filename :
1063648
Link To Document :
