Annealing of heavy ion irradiated Nb3Ge films

Author

Krämer, H.P. ; Schauer, W. ; Wühl, H. ; Nolscher, C. ; Adrian, H. ; Saemann-Ischenko, G.

Author_Institution

Institut für Technische Physik, and Universität Karlsruhe, Karlsruhe, F.R. Germany

Volume

21

Issue

2

fYear

1985

fDate

3/1/1985 12:00:00 AM

Firstpage

823

Lastpage

826

Abstract

High TcNb3Ge films prepared by coevaporation have been irradiated by 20 MeV sulfur ions at low temperatures (< 25 K). X-ray analysis showed an expansion of the Al5 lattice and an increasing degree of amorphicity, while Tcvs. dose decreased from 22 K to 4.3 K with a slight minimum of ∼70 mK depth at $\\phi t\\sim 3.10^{15}$ cm^-2before saturation. - Filmsirradiated by doses up to $\\leq 1.5 \\cdot 10^{15}$ cm^-2could be annealed to the pre-irradiation Tc. In contrast, strong irradiation led to an (X-ray-) amorphous structure, from which Tcvalues of only 15-17 K could be recovered, similar to the results obtained for amorphous NbGe films condensed at LN2temperature. - The behaviour of the film resistivity during the heat treatment indicates that for films irradiated by low doses only lattice defects anneal, whereas for high dose damaged films recrystallization from the amorphous state occurs.

Keywords

Heavy ions; Ion radiation effects; Superconducting materials; Amorphous materials; Annealing; Conductors; Electron guns; Filters; Germanium; Lattices; Niobium compounds; Substrates; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1985.1063648

Filename

1063648