• DocumentCode
    1008403
  • Title

    Three-terminal superconducting devices

  • Author

    Gallagher, W.J.

  • Author_Institution
    IBM Thomas J.Watson Research Center, Yorktown Heights, New York
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    709
  • Lastpage
    716
  • Abstract
    The transistor has a number of properties that make it so useful. We discuss these and the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance. These properties then serve as criteria by which to evaluate three-terminal devices that have been proposed for applications at superconducting temperatures. FETs can retain their transistor properties at low temperatures, but their power consumption is too large for high-speed, high-density cryogenic applications. We discuss in detail why demonstrated superconducting devices with three terminals - Josephson effect based devices, injection controlled weak links, and stacked tunnel junction devices such as the superconducting transistor proposed by K. Gray and the quiteron - each fail to have true transistor-like properties. We conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions.
  • Keywords
    Bibliographies; Superconducting devices; Transistors; Capacitance; Delay; Josephson junctions; Logic circuits; Logic devices; Superconducting devices; Superconductivity; Temperature; Wire; Wiring;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1063664
  • Filename
    1063664