DocumentCode
1008403
Title
Three-terminal superconducting devices
Author
Gallagher, W.J.
Author_Institution
IBM Thomas J.Watson Research Center, Yorktown Heights, New York
Volume
21
Issue
2
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
709
Lastpage
716
Abstract
The transistor has a number of properties that make it so useful. We discuss these and the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance. These properties then serve as criteria by which to evaluate three-terminal devices that have been proposed for applications at superconducting temperatures. FETs can retain their transistor properties at low temperatures, but their power consumption is too large for high-speed, high-density cryogenic applications. We discuss in detail why demonstrated superconducting devices with three terminals - Josephson effect based devices, injection controlled weak links, and stacked tunnel junction devices such as the superconducting transistor proposed by K. Gray and the quiteron - each fail to have true transistor-like properties. We conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions.
Keywords
Bibliographies; Superconducting devices; Transistors; Capacitance; Delay; Josephson junctions; Logic circuits; Logic devices; Superconducting devices; Superconductivity; Temperature; Wire; Wiring;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1063664
Filename
1063664
Link To Document