Title :
Capacitance measurements on silicon microstrip detectors
Author :
Masciocchi, S. ; Peisert, A. ; Ronqvist, C. ; Vite, D. ; Wheadon, R.
Author_Institution :
INFN, Milano, Italy
fDate :
8/1/1993 12:00:00 AM
Abstract :
The results of capacitance measurements on both the junction and ohmic sides of detectors with various geometries are presented. Double-sided detectors with a second metal layer and different readout patterns are also studied. Measurements are presented of microstrip capacitance after irradiation with both neutrons and photons. These measurements are made as part of the research by the RD20 collaboration into all aspects of the use of silicon microstrips at the Large Hadron Collider at CERN
Keywords :
capacitance measurement; gamma-ray effects; neutron effects; position sensitive particle detectors; semiconductor counters; Si microstrip detector; capacitance measurements; gamma irradiation; junction; neutron irradiation; ohmic sides; Backplanes; Capacitance measurement; Detectors; Educational institutions; Frequency measurement; Geometry; Microstrip components; Noise level; Silicon; Strips;
Journal_Title :
Nuclear Science, IEEE Transactions on
