Title :
GaAs FET as a light transducer
Author_Institution :
Communications Research Centre, Ottawa, Canada
Abstract :
Conditions are described in which a power GaAs FET is sensitive to and emits light at the same time. With He-Ne 6328 Ã… light stimulation and white-light emission a transducer ratio of 0.005 was measured. Both the sensitivity to light and the light emission are very nonuniform across the device. Although each is a measure of device nonuniformity, no correlation between the two methods of nonuniformity measurement was observed.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; luminescent devices; photodetectors; phototransistors; power transistors; sensitivity; GaAs FET; He-Ne 6328 angstroms light stimulation; III-V semiconductors; device nonuniformity; light transducer; luminescent devices; power transistors; white-light emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850284
