Title :
Low-threshold InGaAsP buried-crescent stop-cleaved lasers for monolithic integration
Author :
Antreasyan, A. ; Chen, C.Y. ; Logan, R.A.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We report InGaAsP buried-crescent lasers emitting at 1.3 ¿m with laser facets prepared by the stop-cleaving technique. Threshold currents as low as 34 mA and differential quantum efficiencies as high as 33% have been obtained. Our results are comparable to those obtained with conventionally cleaved wafers and proves the excellent quality of the cleaved facets utilising the stop-cleave technique.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; semiconductor junction lasers; 1.3 microns wavelength; III-V semiconductors; InGaAsP; buried-crescent lasers; cavity resonators; integrated optics; laser facets; low-threshold operation; monolithic integration; semiconductor lasers; stop-cleaving technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850287
