Title :
Low-temperature epitaxial growth of GaAs on (100) silicon substrates
Author :
Christou, Alex ; Wilkins, B.R. ; Tseng, W.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
MBE growth of GaAs on (100) silicon has been achieved at low substrate temperatures with and without an initial desorption of the silicon surface. An arsenic overpressure (5 × 10 ¿8 torr) is necessary for epitaxial growth. The films grown were intrinsic and were twinned in the [110] direction.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; twinning; As overpressure; GaAs; III-V semiconductors; MBE growth; Si (100) substrates; [100] direction twinning; epitaxial growth; low substrate temperatures; surface desorption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850289
