DocumentCode
1008702
Title
Low-temperature epitaxial growth of GaAs on (100) silicon substrates
Author
Christou, Alex ; Wilkins, B.R. ; Tseng, W.F.
Author_Institution
Naval Research Laboratory, Washington, USA
Volume
21
Issue
9
fYear
1985
Firstpage
406
Lastpage
408
Abstract
MBE growth of GaAs on (100) silicon has been achieved at low substrate temperatures with and without an initial desorption of the silicon surface. An arsenic overpressure (5 × 10 ¿8 torr) is necessary for epitaxial growth. The films grown were intrinsic and were twinned in the [110] direction.
Keywords
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; twinning; As overpressure; GaAs; III-V semiconductors; MBE growth; Si (100) substrates; [100] direction twinning; epitaxial growth; low substrate temperatures; surface desorption;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850289
Filename
4251190
Link To Document