Title :
Microwave PIN diodes for GaAs IC
Author :
Tayrani, R. ; Sobhy, M.I.
Author_Institution :
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Abstract :
The letter describes the design and fabrication techniques for successful realisation of two types of GaAs PIN diodes which lend themselves to integration into GaAs ICs. PIN diodes with a new shallow trench structure exhibit superior microwave performance to the interdigitated structure.
Keywords :
III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; semiconductor diodes; solid-state microwave devices; GaAs; III-V semiconductors; MMIC; PIN diodes; fabrication; microwave performance; monolithic IC; p-i-n diodes; shallow trench structure; solid-state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850291
