DocumentCode
1008735
Title
GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ⩾ 0.9 μm
Author
Schubert, E. Fred ; Fischer, Anath ; Ploog, K.
Author_Institution
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Volume
21
Issue
9
fYear
1985
Firstpage
411
Lastpage
412
Abstract
Edge-emitting diodes with a GaAs saw-tooth superlattice as the active region operating with high efficiency at 300 K are reported. The saw-tooth superlattice active region of the device consists of alternating n- and p-type Dirac-delta-doped GaAs layers grown by molecular beam epitaxy. The superlattice bandgap energy is lower than that of the GaAs host material. The new superlattice diode emits monochromatic light at wavelengths λ ⩾ 0.9 μm.
Keywords
III-V semiconductors; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; semiconductor superlattices; 0.9 microns monochromatic light emission; 300K; Dirac-delta-doped GaAs layers; III-V semiconductors; LED; alternate n-type/p-type layers; bandgap energy; edge-emitting diode; light-emitting diode; molecular beam epitaxy; optical communication equipment; sawtooth superlattice active region; semiconductor growth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850292
Filename
4251193
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