Title :
GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ⩾ 0.9 μm
Author :
Schubert, E. Fred ; Fischer, Anath ; Ploog, K.
Author_Institution :
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Abstract :
Edge-emitting diodes with a GaAs saw-tooth superlattice as the active region operating with high efficiency at 300 K are reported. The saw-tooth superlattice active region of the device consists of alternating n- and p-type Dirac-delta-doped GaAs layers grown by molecular beam epitaxy. The superlattice bandgap energy is lower than that of the GaAs host material. The new superlattice diode emits monochromatic light at wavelengths λ ⩾ 0.9 μm.
Keywords :
III-V semiconductors; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; semiconductor superlattices; 0.9 microns monochromatic light emission; 300K; Dirac-delta-doped GaAs layers; III-V semiconductors; LED; alternate n-type/p-type layers; bandgap energy; edge-emitting diode; light-emitting diode; molecular beam epitaxy; optical communication equipment; sawtooth superlattice active region; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850292
