Title :
Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy
Author :
Lievin, J.L. ; Alexandre, F.
Author_Institution :
Centre National dEtudes des Télécommunications, Centre Paris B, Laboratoire de Bagneux, Bagneux, France
Abstract :
P-type doping levels up to 2×1020 at cm¿3 in GaAs are presented using molecular beam epitaxy and beryllium as acceptor impurity. The epilayers present a perfect surface morphology and Be is not found to diffuse into the substrate, which permits the incorporation of such films into multilayer structures for device applications.
Keywords :
III-V semiconductors; beryllium; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; Be acceptor impurity; GaAs; GaAs:Be; III-V semiconductors; MBE; device applications; epilayers; molecular beam epitaxy; multilayer structures; p-type dopant; perfect surface morphology; ultrahigh doping levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850293
