DocumentCode
1008745
Title
Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy
Author
Lievin, J.L. ; Alexandre, F.
Author_Institution
Centre National dEtudes des Télécommunications, Centre Paris B, Laboratoire de Bagneux, Bagneux, France
Volume
21
Issue
10
fYear
1985
Firstpage
413
Lastpage
414
Abstract
P-type doping levels up to 2×1020 at cm¿3 in GaAs are presented using molecular beam epitaxy and beryllium as acceptor impurity. The epilayers present a perfect surface morphology and Be is not found to diffuse into the substrate, which permits the incorporation of such films into multilayer structures for device applications.
Keywords
III-V semiconductors; beryllium; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; Be acceptor impurity; GaAs; GaAs:Be; III-V semiconductors; MBE; device applications; epilayers; molecular beam epitaxy; multilayer structures; p-type dopant; perfect surface morphology; ultrahigh doping levels;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850293
Filename
4251195
Link To Document