Free-ion yield for tetramethylsilane and tetramethylgermanium

Author

Hoshi, Yusuke ; Higuchi, Masanori ; Iso, H. ; Sakamoto, Makoto ; Ooyama, K. ; Yuta, H. ; Abe, K. ; Hasegawa, K. ; Suekane, F. ; Kawamura, N. ; Neichi, M. ; Suzuki, K. ; Masuda, K. ; Kikuchi, R. ; Miyano, K.

Author_Institution

Dept. of Eng., Tohoku Gakuin Univ., Tagajo, Japan

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

532

Lastpage

536

Abstract

Free-ion yields from ²⁰⁷Bi conversion electrons are measured as a function of applied electric field in an ionization chamber filler with tetramethylsilane (TMS) or tetramethylgermanium (TMG), which are purified by simple methods. The mean thermalization length of electrons liberated in the liquid is calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG are obtained. They are 3.1±0.3, 3.5±0.2 and 1.91±12 Å, 173±16 Å, respectively, including the impurity effect in liquid

Keywords

ionisation chambers; ionisation of liquids; 173 Å; 191 Å; 3.1 Å; 3.5 Å; ²⁰⁷Bi conversion electrons; TMG; TMS; distribution function; electric field; free in yield; ionization chamber; mean thermalization length; tetramethylgermanium; tetramethylsilane; Distribution functions; Electric variables measurement; Electrons; Impurities; Ionization chambers; Liquids; Physics; Probability; Spontaneous emission; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256615

Filename

256615