• DocumentCode
    1008988
  • Title

    InGaAs photodiodes prepared by low-pressure MOCVD

  • Author

    Poulain, P. ; Razeghi, M. ; Kazmierski, K. ; Blondeau, R. ; Philippe, Pernelle

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    21
  • Issue
    10
  • fYear
    1985
  • Firstpage
    441
  • Lastpage
    442
  • Abstract
    InGaAs/InP double-heterostructure PIN photodiodes are demonstrated using the low-pressure MOCVD growth technique. Several types of detectors are reported, ranging from small-area ones suitable for PINFET implementation to broad-area general-purpose devices for both long- and short-wavelength applications. These diodes have performances equivalent to those obtained when using conventional growth techniques.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; III-V semiconductors; InGaAs/InP double-heterostructure PIN photodiodes; PINFET implementation; broad-area general-purpose devices; growth techniques; long-wavelength applications; low-pressure MOCVD; low-pressure MOCVD growth technique; short-wavelength applications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850314
  • Filename
    4251219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1008988