Title :
InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHz
Author :
Schmitt, Renata ; Heime, K.
Author_Institution :
University of Duisburg, Solid State Electronics Laboratory, Department of Electrical Engineering, Duisburg, West Germany
Abstract :
InGaAs JFETs were made by LPE growth of the n-channel and zinc diffusion from spin-on films at low temperatures for the p+-gate. Extrinsic transconductances in excess of 100 mS/mm for gate lengths of 1.2 ¿m and frequency limits (MAG = 1) above 30 GHz were obtained. The good agreement between experimentally determined data and those calculated from material parameters and device dimensions indicates that a low temperature and/or short time process for gate formation is a necessary prerequisite in InGaAs JFET technology.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; liquid phase epitaxial growth; solid-state microwave devices; III-V semiconductors; InGaAs junction FETs; JFET technology; LPE; Zn diffusion; device dimensions; extrinsic transconductances; frequency limit; gate lengths; material parameters; p+-gate; spin-on films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850320
