DocumentCode
1009048
Title
InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHz
Author
Schmitt, Renata ; Heime, K.
Author_Institution
University of Duisburg, Solid State Electronics Laboratory, Department of Electrical Engineering, Duisburg, West Germany
Volume
21
Issue
10
fYear
1985
Firstpage
449
Lastpage
451
Abstract
InGaAs JFETs were made by LPE growth of the n-channel and zinc diffusion from spin-on films at low temperatures for the p+-gate. Extrinsic transconductances in excess of 100 mS/mm for gate lengths of 1.2 ¿m and frequency limits (MAG = 1) above 30 GHz were obtained. The good agreement between experimentally determined data and those calculated from material parameters and device dimensions indicates that a low temperature and/or short time process for gate formation is a necessary prerequisite in InGaAs JFET technology.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; liquid phase epitaxial growth; solid-state microwave devices; III-V semiconductors; InGaAs junction FETs; JFET technology; LPE; Zn diffusion; device dimensions; extrinsic transconductances; frequency limit; gate lengths; material parameters; p+-gate; spin-on films;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850320
Filename
4251225
Link To Document