DocumentCode
1009087
Title
Influence of source-drain series resistance on MOSFET field-effect mobility
Author
Cabon-Till, B. ; Ghibaudo, Gerard ; Cristoloveanu, S.
Author_Institution
ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, Grenoble, France
Volume
21
Issue
11
fYear
1985
Firstpage
457
Lastpage
458
Abstract
A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.
Keywords
carrier mobility; electric resistance; insulated gate field effect transistors; semiconductor device models; MOSFET; channel lengths; field-effect mobility; gate voltage; model; short-channel devices; source-drain series resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850324
Filename
4251231
Link To Document