DocumentCode
1009261
Title
A new superconducting-base transistor
Author
Frank, D.J. ; Brady, M.J. ; Davidson, A.
Author_Institution
IBM Watson Research Center, Yorktown Heights, NY
Volume
21
Issue
2
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
721
Lastpage
724
Abstract
The continuing search for a good cryogenic transistor has led to a new proposal, the superconducting-base semiconductor-isolated transistor (SUB-SIT). This three-terminal device is expected to have characteristics very similar to those of bipolar transistors, but at millivolt operating levels. We present discussions of the concepts involved in the SUBSIT, proposed fabrication techniques, and theoretical results for its DC and high frequency characteristics.
Keywords
Bipolar transistors; Superconducting devices; Bipolar transistors; Cryogenics; Energy states; Frequency; Isolators; Josephson junctions; Ohmic contacts; Radiative recombination; Superconducting epitaxial layers; Superconductivity;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1063733
Filename
1063733
Link To Document