Title :
Parameter extraction on MOSFET transistors using a new optimised fit strategy
Author :
Maes, W. ; De Meyer, K. ; Dupas, L.
Author_Institution :
K.U. Leuven, Heverlee, Belgium
Abstract :
Classical parameter-extraction programs rely on the minimisation of the relative current deviation. However, since, especially for analogue applications, the slope of the IDS/VDS curve in the saturation region is at least equally important, a new fit strategy has been developed. This new fit strategy extracts a parameter set which optimises the current residual as well as the slope residual at every point.
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; operational amplifiers; semiconductor device models; CMOS operational amplifiers; MOSFET transistors; analogue applications; current residual; minimisation; models; optimised fit strategy; parameter-extraction; relative current deviation; saturation region; slope residual;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850347
