Title :
High-performance DC-PBH lasers at 1.52 μm by a hybrid MOVPE/LPE process
Author :
Nelson, A.W. ; Wong, S. ; Regnault, J.C. ; Hobbs, R.E. ; Murrell, D.L. ; Walling, R.H.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Highly efficient operation of low-threshold 1.52 μm lasers grown by atmospheric pressure MOVPE is reported. The lasers were of a novel MOVPE/LPE hybrid design, based on the DC-PBH laser and operated with threshold currents as low as 11 mA and external quantum efficiencies up to 56%, and were characterised by near-circular far-field radiation patterns. This has allowed coupling efficiencies of 50% to be obtained between the devices and tapered-lens single-mode fibre.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; vapour phase epitaxial growth; DC-PBH laser; III-V semiconductors; MOVPE/LEP hybrid design; atmospheric pressure MOVPE; coupling efficiencies; double channel planar buried heterostructure; external quantum efficiencies; hybrid MOVPE/LPE process; low threshold operation; near-circular far-field radiation patterns; semiconductor lasers; tapered-lens single-mode fibre; threshold currents; wavelength 1.52 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850349
