Title :
JFET monolithic preamplifier with outstanding noise behaviour and radiation hardness characteristics
Author :
Radeka, Veljko ; Rescia, S. ; Manfredi, P.F. ; Speziali, V. ; Svelto, F.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
A second series of monolithic preamplifiers based on epitaxial channel JFETs and intended for calorimetry at hadron colliders has been realized. The employed buried layer process is upgraded, resulting in a lower pinch-off voltage and a reduced power dissipation. Results are presented on noise, dynamic behavior and radiation damage. New versions of the preamplifier are designed for both large capacitance detectors and for low capacitance pre-shower detectors
Keywords :
field effect integrated circuits; junction gate field effect transistors; linear integrated circuits; nuclear electronics; preamplifiers; radiation hardening (electronics); semiconductor device noise; JFET monolithic preamplifier; calorimetry; epitaxial channel JFETs; large capacitance detectors; low capacitance pre-shower detectors; noise; noise behaviour; pinch-off voltage; power dissipation; radiation damage; radiation hardness; Capacitance; Current measurement; Density measurement; Detectors; Impedance; JFET circuits; Power dissipation; Preamplifiers; Resistors; Voltage control;
Journal_Title :
Nuclear Science, IEEE Transactions on
