Author :
Dierickx, B. ; Wouters, D. ; Willems, Geert ; Alaerts, A. ; Debusschere, I. ; Simoen, Eddy ; Vlummens, J. ; Akimoto, Hajime ; Claeys, Cor ; Maes, Hannes ; Hermans, L. ; Heijne, Erik H. M. ; Jarron, P. ; Anghinolfi, F. ; Campbell, Malachy ; Pengg, F.X. ; A
Abstract :
A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm2. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality
Keywords :
insulated gate field effect transistors; leakage currents; nuclear electronics; p-i-n diodes; semiconductor counters; CMOS-electronics; MOSFET; SIMOX; Si; Si-on-insulator wafers; fabrication methods; high resistivity substrate; high-resistivity PIN-diodes; leakage current; monolithic pixel detectors; particle detector diodes; CMOS process; Collaboration; Conductivity; Diodes; Fabrication; Leak detection; Leakage current; MOSFET circuits; Radiation detectors; Temperature;
