• DocumentCode
    1009395
  • Title

    Study of preparation techniques for a practical microbridge dc-SQUID structure fabricated from Nb3Ge

  • Author

    Rogalla, H. ; David, B. ; Mück, M. ; Kato, Y.

  • Author_Institution
    Universität Giessen, Giessen, FRG
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    536
  • Lastpage
    538
  • Abstract
    Tests with a small area Nb3Ge dc-SQUID structure revealed promising results: a wide operating temperature range extending up to 20.2 K was achieved with a best modulation depth of 15%. Here we describe development steps towards a more practical device: enlargement of the flux sensitive area and integration of a Nb3Ge coupling coil For this purpose a Nb3Ge multilayer technique was developed using SiO2insulating layers. To optimize the behavior of the very small microbridges the influence of reactive ion etching parameters on the decrease of Tcduring the preparation was studied.
  • Keywords
    Bridge circuits; Josephson devices; Bridge circuits; Cathodes; Critical current; Etching; Germanium; Niobium compounds; Nonhomogeneous media; Superconducting coils; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1063743
  • Filename
    1063743