Title :
Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE
Author :
Rose, B. ; Devoldere, P. ; Mircea, A. ; Robein, D. ; Trotte, M.
Author_Institution :
Centre National d´Etudes des Télécommunications, Laboratoires de Bagneux, Paris, France
Abstract :
Room-temperature pulsed operation has been achieved at and below 1.3 μm for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm2 (for a cavity length of 1000 μm) have been obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 microns wavelength; GaInAsP/InP; III-V semiconductors; VPE; atmospheric-pressure MOVPE; low-threshold operation; metalorganic vapour phase epitaxy; pulsed operation; room temperature; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850368
