DocumentCode :
1009598
Title :
Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies
Author :
Camacho-Pe¿¿alosa, C. ; Aitchison, C.S.
Author_Institution :
Chelsea College, Department of Electronics, London, UK
Volume :
21
Issue :
12
fYear :
1985
Firstpage :
528
Lastpage :
529
Abstract :
Measurements showing the frequency dependence of MESFET drain impedance at low frequencies have been performed. A simple model which simulates this behaviour is also proposed.
Keywords :
Schottky gate field effect transistors; electric impedance; semiconductor device models; solid-state microwave devices; LF operation; drain impedance; frequency dependence; low frequencies; microwave MESFET; model; output impedance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850373
Filename :
4251295
Link To Document :
بازگشت