Title :
Subpicosecond base transit time observed in a hot-electron transistor (HET)
Author :
Muto, Salvatore ; Imamura, Kousuke ; Yokoyama, Naoki ; Hiyamizu, S. ; Nishi, Hidetaka
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 Ã… thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; carrier mobility; gallium arsenide; high field effects; hot carriers; 4.2K; 4.5 T; AlGaAs/GaAs; HET; III-V semiconductors; cyclotron motion; double heterojunction; hot-electron transistor; quasiballistic transport; subpicosecond base transit time; transverse magnetic field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850392
