• DocumentCode
    1009861
  • Title

    Selective etching characteristics of HF for AlxGa1-xAs/GaAs

  • Author

    Wu, X.S. ; Coldren, L.A. ; Merz, J.L.

  • Author_Institution
    Academy of Sciences of China Shanghai Institute of Metallurgy, Shanghai, China
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    558
  • Lastpage
    559
  • Abstract
    The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x¿0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; hydrogen compounds; p-n heterojunctions; semiconductor technology; AlxGa1-xAs/GaAs; HF; III-V semiconductors; cleaved facet; selective etching characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850394
  • Filename
    4251323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009861