Title :
Simplified analysis of body-contact effect for MOSFET/SOI
Author :
Omura, Yasuhisa ; Izumi, Katsutoshi
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
fDate :
8/1/1988 12:00:00 AM
Abstract :
A simplified experimental analysis of the body-contact effect and its impact on drain current reduction is carried out to clarify the relevant parameters for MOSFET/SOI design. In the experiments, body contacts in the source are distributed in a mosaic configuration. The empirical relationship between drain current and the number of body contacts is obtained. The relationship suggests that there must be a sufficient number of body contacts to suppress the kink effect to avoid reduction in drain current
Keywords :
field effect integrated circuits; insulated gate field effect transistors; MOSFET/SOI; Si; body-contact effect; drain current reduction; mosaic configuration; Aluminum; Annealing; Atomic layer deposition; Bipolar transistors; Boron; Impurities; Large scale integration; MOSFET circuits; Semiconductor films; Silicon on insulator technology;
Journal_Title :
Electron Devices, IEEE Transactions on
