• DocumentCode
    1009975
  • Title

    Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multiquantum-well lasers

  • Author

    Dutta, N.K. ; Wessel, T. ; Olsson, N.A. ; Logan, R.A. ; Yen, R. ; Anthony, P.J.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    571
  • Lastpage
    573
  • Abstract
    The fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback lasers with multiquantum-well active layers are reported. The lasers are 320 ¿m long and have four active wells (¿300 Å thick). The lasers have threshold current ¿100 mA at 30°C, external differential quantum efficiency ¿0.1 mW/mA/facet at 30°C and To¿ 60 K and can be operated in the same DFB mode up to 70°C. The measured frequency chirp is about a factor of 3 smaller than that for conventional double-heterostructure lasers. The smaller chirp should allow larger repeater spacing for high-bit-rate long-distance fibre transmission systems applications.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; optical waveguides; semiconductor junction lasers; DFB mode; III-V semiconductors; InGaAsP; MQW; distributed-feedback; frequency chirp; high-bit-rate; larger repeater spacing; long-distance fibre transmission systems; multiquantum-well lasers; optical communication devices; optical fibres; ridge-guide; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850404
  • Filename
    4251335