Title :
High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells
Author :
Wakita, Ken ; Kawamura, Yuriko ; Yoshikuni, Y. ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Sharp heavy-hole and light-hole excitons are clearly observed for the first time in InGaAs/InAlAs multiple-quantum-well (MQW) structures at temperatures ranging from ¿190°C to 70°C. The halfwidth of the heavy-hole exciton line is as narrow as 6.2 meV at room temperature. InGaAs/InAlAs MQWs are prepared in a PIN doped configuration by molecular beam epitaxy. An enhanced electroabsorption effect is also clearly observed in long-wavelength-region MQWs.
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor superlattices; -190°C to 70°C; InGaAs/InAlAs; MBE; MQW; PIN diode; enhanced electroabsorption effect; heavy-hole exciton; high-temperature excitons; light-hole excitons; long-wavelength-region; molecular beam epitaxy; multiple quantum wells; optical fibre transmission; p-i-n doped configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850406
