Title :
15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature
Author :
Su, C.B. ; Lanzisera, V. ; Olshansky, R. ; Powazinik, W. ; Meland, E. ; Schlafer, J. ; Lauer, R.B.
Author_Institution :
GTE Laboratories Incorporated, Waltham, USA
Abstract :
A modulation bandwidth of 15 GHz is reported for vapour-phase regrown (VPR) 1.3 μm InGaAsP buried heterostructure (BH) lasers. This is the highest bandwidth achieved at room temperature for a III-V semiconductor laser under CW operation. The bandwidth against square root of bias optical power is linear to 15 GHz and no band width saturation effects are observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical communication equipment; optical modulation; semiconductor junction lasers; vapour deposition; 1.3 microns wavelength; 15 GHz; BH semiconductor lasers; CW operation; III-V semiconductor; InGaAsP; bias optical power; buried-heterostructure lasers; direct modulation bandwidth; optical communication equipment; room temperature; short-cavity type; vapour phase regrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850408
